Front-Side Metal Sputtering Deposition
Dissociate argon atoms (Ar) in a high vacuum environment to give secondary electrons and Ar ions, accelerate the latter with the negative potential on the target to hit the target and deposit target metals on the surface of the wafer.What ProPowertek can do for you?
Metal Sputtering Deposition Process
Customers’ wafers shall be fed into sputtering machine for metal deposits according to given metal types and thicknesses after IQC(Incoming Quality Control); subject the deposited wafer to metal etching after defining the metal via photo aligner with the customer-specified mask pattern and photolithography machine; perform OQC(Outgoing Quality Control) after PR (photoresist) strip.
The Superiority of ProPowertek
- Minimize loss of thickness of the exposed Al pad with Ti / NiV / Ag based high selectivity rate matching for customers proceeding with mix bonding at lower package costs in subsequent processes.
- Teams of photolithography specialists are ready any time to help customers review Tape Out / Job Files for painless transfer of subsequent masking.
- A team of engineers with diversified experts including front end wafer foundry, wafer thinning and backend packaging house, knowledgeable and experienced in process integration and analysis in phases from front through middle to back and well-prepared to assist customers in accelerated development, troubleshooting, and mass production stabilization.
Case Sharing
Metal Sputtering Deposition
The metal sputtering deposition-based front-side metallization process minimizes the undercutting of NiV / Ti up to 0.22um.
This process enables customers to conduct the follow-up Clip bond or Mixed bond
When doing mixed bond, the biggest question is how to protect the gate pad?
Highly selective etching can ensure the aluminum thickness of the gate pad.
Original : Al-Cu pad 4.42um
Low selective etching : Al-Cu pad 0.352um only
Highly selective etching : Al-Cu pad can reach to 4.35um
Application
- Existing metal options: Ti / NiV / Ag with thickness subject to customer requirements
- Applicable to 8" wafers
- Excellent uniformity of Ti/NiV/Ag growth
- Minimum undercut
