Backside Implantation

Backside Implantation
Figure: Illustration of backside implantation

Figure: Illustration of backside implantation

Backside implantation is a process which ionizes gas molecules to be implanted with plasma, accelerates ions by electric field, bend their direction in magnetic field and finally hit them into the shallow surface of the backside wafer with high kinetic energy. This makes P-type semiconductor by implanting 3-valency ions in the wafer and N-type semiconductor by 5-valency ions.

What ProPowertek Can Do for You?

Implement ion on the backside of thin wafer to form the collector or field stop of IGBT which currently is the service provided by only a few of the 8-inch companies in Taiwan.

Case Sharing

Illustrate ion concentration by SIMS after ion implantation in the backside of wafer

Figure: Illustrate ion concentration by SIMS after ion implantation in the backside of wafer

Application

  • Ion implantation in wafer backside.
  • Wafer: 8" non-Taiko150 um and Taiko 150~50um; 6" 150um in developing.
  • Type of implanter dopant: Boron (B), phosphorus (P) and arsenic (As) to be developed as required by customers.
  • Energy for ion implantation: 2.4MeV with the range of 2.4 MeV~8 MeV in engineering verification process.
  • Provide IGBT total solution along with the laser annealing machine provided, customized implantation and activation depth available upon request.

Mr. Hsieh / Felipe
Tel: +886-3-579-9209#5802
email: contact@propowertek.com

Send us a message

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