Laser Annealing
What ProPowertek Can Do for You?
Anneal wafer backside after ion implantation wafer to activate ions and repair crystal lattice damaged by the implantation. In spite of the high temperature at 800~1100oC, this technique imposes no damage to components on the front side, since the very short heating time, focus in small area and less than 50oC temperature on the front side.
The Superiority of ProPowertek
ProPowertek is one of very few laser annealing service providers in Taiwan. It employs machines featuring laser beams of both green and far-infrared light source. ProPowertek's process R&D team is always ready to integrate requirements of the front-end wafer fab and middle and back-end process to help customers for early mass production and market launch.
Case Sharing
Figure: Compare "Pre- and post-activation ion concentration distribution" with SIMS after activating ions implanted by laser annealing.
Application
- Activate ions with laser annealing after ions are implanted in the backside of wafer.
- Capable of annealing 6" and 8" thin wafer: 150um and above for non-Taiko ones and 150~50um for Taiko ones.
- Total IGBT solutions may be provided along with ion implantation machine; customized implantation and activation depth available too
