Conventional CPU/GPU power supplies convert high frequency electricity by feeding drivers with pulses generated by Pulse Width Modulation (PWM) to control the High side/Low side MOSFET switch as shown in figure 1. The conventional approach employs three independent ICs (Driver, high side MOSFET, low side MOSFET) scattered on a mainboard to perform this function. Suffering a very long signal communication route among them, the operation frequency has to be kept in the range of 200KHz–400KHz. In case of operations requiring environments of higher frequency, the CPU/GPU may end up without adequate dynamic current.
DR-MOS packages Driver, High side MOSFET, and Low side MOSFET in one QFN to shorten the communication path for control signals. This raises operation frequency in the range of 550KHz–850KHz to give the CPU/GPU adequate dynamic current.
The DR-MOS-based mainboards that come with lower temperature and resistance as well as better efficiency and lower power consumption. In addition, the mainboard also benefits with better overclocking performance due to ultra-low power response time and low impedance features by DR-MOS.
DR-MOS technology is mostly adopted by applications in CPU/GPU power supply and products requiring high frequency operations including servers, database, and 5G.
Thanks to continuous efforts in minimizing components and maximizing integration of components by all IC suppliers, DR-MOS products are now the focus of development by each IC manufacturer. With highly advanced Front Side Metallization (FSM), ProPowertek is replacing end metal Al with Ag or Au, and its mature thinning technology is ready for mass production of 50um Taiko process and small quantities to customers for 37.5um products' engineering verification.
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